NSN 5961-00-851-8291

Part Details | TRANSISTOR

5961-00-851-8291 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1155, RELEASE2576, 1683916, 9992701, 999270-1, 2N1155, 952, 2N1155, 9176564, 5961-00-851-8291, 00-851-8291, 5961008518291, 008518291

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196200-851-829120588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-851-8291
Part Number Cage Code Manufacturer
2N115580131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE257680131ELECTRONIC INDUSTRIES ASSOCIATION
168391610001NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT
999270-182577RAYTHEON COMPANYDBA RAYTHEON
2N115596214RAYTHEON COMPANYDBA RAYTHEON
95201295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
2N115501295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
917656418876U S ARMY AVIATION AND MISSILECOMMAND
Technical Data | NSN 5961-00-851-8291
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICAC50.00 MILLIAMPERES MAXIMUM AND BF6.00 MICROAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB750.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.560 INCHES MAXIMUM
OVERALL HEIGHT0.440 INCHES MAXIMUM
OVERALL WIDTH0.255 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN