NSN 5961-00-854-8470

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-00-854-8470 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: JAN1N3070A, LQV0712190014, LQV-071219-0014, 8470010026, 847001-0026, 5961008555863, 5961008548470, 1N643A, 1N628, 8470010026, 847001-0026, 5M.5532.223.03, 3501397, 947179700, 947179-700, MILPRF19500169, MIL-PRF-19500/169, JAN1N3070, QG19, 4576014, 457-6014, 322945425, 3229454-25, 4181421, 418142-1, 3533735010, 353-3735-010, 3533339000, 353-3339-000, 3533083100, 353-3083-100, 3533083000, 353-3083-000, 1065492001, 1065492-001, VBE8901N3070, VBE890-1N3070, 352250010117, 10394251001, 10394251-001, 5961-00-854-8470, 00-854-8470, 5961008548470, 008548470

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196200-854-847020589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-854-8470
Part Number Cage Code Manufacturer
JAN1N3070AC7191ADELCO ELEKTRONIK GMBH
LQV-071219-0014D9460BUNDESAMT FUER AUSRUESTUNG,INFORMATIONSTECHNIK UND NUTZUNG DER
847001-002655819DIAMOND ELECTRONICS INC
5961008555863SCY13E.C.A ETABLISSEMENTCENTRALD'APPROVISIONNEMENT DES
5961008548470SCY13E.C.A ETABLISSEMENTCENTRALD'APPROVISIONNEMENT DES
1N643A07263FAIRCHILD SEMICONDUCTOR CORP
1N62804713FREESCALE SEMICONDUCTOR, INC.
847001-002692325GENERAL DYNAMICS ADVANCEDINFORMATION SYSTEMS INC.
5M.5532.223.03D1901HENSOLDT SENSORS GMBHDIV SEPS
350139711327INTERNATIONAL BUSINESS MACHINES CORP
947179-70013973LITTON SYSTEMS INC. DIV NAVIGATIONSYSTEMS DIVISION
MIL-PRF-19500/16981349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
JAN1N307081349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
QG1937338NAUTEL LIMITED
457-6014A486GNIMIKKEISTOKESKUS NCB FINLAND
3229454-2582577RAYTHEON COMPANYDBA RAYTHEON
418142-196214RAYTHEON COMPANYDBA RAYTHEON
353-3735-01013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
353-3339-00013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
353-3083-10013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
353-3083-00013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
1065492-00117761SWISS AMERICAN JEWEL BEARINGS CORP
VBE890-1N3070H0203THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS
352250010117H0203THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS
10394251-00118876U S ARMY AVIATION AND MISSILECOMMAND
Technical Data | NSN 5961-00-854-8470
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 175.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
CURRENT RATING PER CHARACTERISTICDM100.00 MILLIAMPERES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL GLASS
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OVERALL LENGTH0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL DIAMETER0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESNUCLEAR HARDNESS CRITICAL ITEMS: NO DRAWING TO DETERMINE IF ISC CODE 1 ITEM SHOULD ALSO BE NUCLEAR HARDNESS. CAN'T CHANGE CRITICALITY CODE TO REFLECT NUCLEAR HARDNESS
TEST DATA DOCUMENT81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.).
SPECIFICATION/STANDARD DATA81349-MIL-PRF-19500 TO 169 GOVERNMENT SPECIFICATION