Part Details | TRANSISTOR
5961-00-855-3745 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: JAN2N1234, L00963, 2N1234, JAN2N1234, 2N1234USA, MILS19500179, MIL-S-19500/179, JAN2N1234, 419280080, 4192800-80, 4192800080, 4192800-080, 4192800080, 4192800-080, 352250010184, VBE8902N1234, VBE890-2N1234, 5961-00-855-3745, 00-855-3745, 5961008553745, 008553745
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1960 | 00-855-3745 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-855-3745
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JAN2N1234 | 12498 | CRYSTALONICS, INC. |
| L00963 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 2N1234 | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| JAN2N1234 | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| 2N1234USA | 73293 | L-3 COMMUNICATIONS ELECTRONTECHNOLOGIES, INC. |
| MIL-S-19500/179 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN2N1234 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 4192800-80 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 4192800-080 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 4192800-080 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 352250010184 | H0203 | THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS |
| VBE890-2N1234 | H0203 | THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS |
Technical Data | NSN 5961-00-855-3745
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -110.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -110.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -110.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| POWER RATING PER CHARACTERISTIC | AG400.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 160.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 179 GOVERNMENT SPECIFICATION |