Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-855-5910 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N823A, SZ11940, 5039255, 5039-255, FBMZ107, FBMZ107, 5961-00-855-5910, 00-855-5910, 5961008555910, 008555910
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 29, 1967 | 00-855-5910 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-855-5910
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N823A | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| SZ11940 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 5039-255 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| FBMZ107 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| FBMZ107 | 80103 | VEECO INSTRUMENTS INCLAMBDA DIV |
Technical Data | NSN 5961-00-855-5910
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | EB7.50 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF0.4 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.265 INCHES NOMINAL |
| OVERALL DIAMETER | 0.096 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |