Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-857-8850 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: FD3339, RD5382, SG3718, 128C133H01, CD12644, G1320, 5961-00-857-8850, 00-857-8850, 5961008578850, 008578850
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 11, 1967 | 00-857-8850 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-857-8850
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| FD3339 | 13715 | FAIRCHILD SEMICONDUCTOR CORPCOMPONENTS GROUP |
| RD5382 | 07933 | FAIRCHILD SEMICONDUCTOR CORPSEMICONDUCTOR DIV HQ |
| SG3718 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 128C133H01 | 97942 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NORTHROP GRUMMAN SYSTEMS |
| CD12644 | 15818 | TELCOM SEMICONDUCTOR INC |
| G1320 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-857-8850
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 70.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | AF20.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF200.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.265 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.105 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |