NSN 5961-00-864-7527

Part Details | TRANSISTOR

5961-00-864-7527 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 29352C6, 293-52C6, P118101, P11810-1, P11810, AMF311, 38473, 2N3772, SDT7686, 158H10, 5961-00-864-7527, 00-864-7527, 5961008647527, 008647527

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 18, 196700-864-752720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-864-7527
Part Number Cage Code Manufacturer
293-52C600752EDO LLCDIV ANTENNA PRODUCTS
P11810-107639GE AVIATION SYSTEMS LLCDBA GE AVIATION
P1181007639GE AVIATION SYSTEMS LLCDBA GE AVIATION
AMF31107639GE AVIATION SYSTEMS LLCDBA GE AVIATION
3847354590RCA CORPDISTRIBUTION AND SPECIAL PRODUCTS
2N377254590RCA CORPDISTRIBUTION AND SPECIAL PRODUCTS
SDT768621845SOLITRON DEVICES, INC.
158H1005277WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV
Technical Data | NSN 5961-00-864-7527
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB5.00 AMPERES MAXIMUM AND AC20.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB150.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD AND 1 CASE
OVERALL LENGTH0.375 INCHES NOMINAL
OVERALL DIAMETER0.875 INCHES MAXIMUM