NSN 5961-00-866-4810

Part Details | TRANSISTOR

5961-00-866-4810 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N708, 2N708, 014137, 014-137, 93062000050, 9306-2000-050, 2N708, 2N708, 2N708, 2N708, 2N708, 2N708, 2N708, 5L551220346, 5L5512-203-46, 2N708, B46136, 2N708, 0104467, GQF24342, AK0104467, 2N708, 2N708, ND214467, 11739100, 417498074000, 417-4-98074-000, 5961-00-866-4810, 00-866-4810, 5961008664810, 008664810

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196200-866-481020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-866-4810
Part Number Cage Code Manufacturer
2N70814909ALPINE INDUSTRIES INC
2N70873445AMPEREX ELECTRONIC CORP
014-13792739AMPEX SYSTEMS CORP
9306-2000-050K0656BAE SYSTEMS (OPERATIONS) LIMITEDDBA BAE SYSTEMS PLC
2N70831637BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I
2N70880131ELECTRONIC INDUSTRIES ASSOCIATION
2N70803776ESCO INC
2N70807263FAIRCHILD SEMICONDUCTOR CORP
2N70804713FREESCALE SEMICONDUCTOR, INC.
2N70872699GENERAL INSTRUMENT CORPCORPORATE HEADQUARTERS
2N70803877GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP
5L5512-203-46D1901HENSOLDT SENSORS GMBHDIV SEPS
2N70813688MARTIN MARIETTA CORPELECTRONICS LABORATORY
B46136K0967MBDA UK LIMITEDDBA MBDA UK LTD
2N708C0187MOTOROLA GMBH GESCHAEFTSBEREICHHALBLEITER
0104467D0894ROHDE & SCHWARZ GMBH & CO. KG
GQF24342D0894ROHDE & SCHWARZ GMBH & CO. KG
AK0104467D0894ROHDE & SCHWARZ GMBH & CO. KG
2N70893332SYLVANIA ELECTRIC PRODUCTS INCSEMICONDUCTOR PRODUCTS DIV
2N70801295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
ND214467K1182THALES UK LIMITED DBA THALES UKLTDTRAINING AND SIMULATION
1173910019200US ARMY ARDEC RDECOM
417-4-98074-000K7785ZARLINK SEMICONDUCTOR LIMITED
Technical Data | NSN 5961-00-866-4810
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
POWER RATING PER CHARACTERISTICAB360.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA80131-RELESE3289 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION