Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-866-5451 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N2929A, RELEASE 4605, 1N2929A, 720699112, 720699-112, 720699112, 720699-112, 1N2929A, 110402821, 11040282-1, 5961-00-866-5451, 00-866-5451, 5961008665451, 008665451
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-866-5451 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-866-5451
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N2929A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 4605 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N2929A | 99942 | N A P SMD TECHNOLOGY INC |
| 720699-112 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 720699-112 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N2929A | 31338 | SEMITRONICS CORP |
| 11040282-1 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-866-5451
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 0.5 MAXIMUM VALLEY-POINT VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | CG1.00 MILLIAMPERES MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES NOMINAL |
| OVERALL DIAMETER | 0.219 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | WIN ANODE TYPE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE2913 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |