Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-866-5454 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: A159498, A1-59498, JAN1N821A, 843821XX, 843-821XX, Q62702Z302Z, Q62702Z302Z, Q62702Z302Z, 1N821, JAN1N821, 1N821, MILS19500159, MILS19500-159, 504054, 5040-54, 4178600206, 4178600-206, 3533496000, 353-3496-000, 514342, 21950, 152046100, 152-0461-00, 2059331, 205933-1, 741002, 5961-00-866-5454, 00-866-5454, 5961008665454, 008665454
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-866-5454 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-866-5454
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| A1-59498 | 00159 | ACME ELECTRIC CORP |
| JAN1N821A | C7191 | ADELCO ELEKTRONIK GMBH |
| 843-821XX | 25965 | AMETEK PROGRAMMABLE POWER, INC.DBA AMETEK PROGRAMMABLE POWER |
| Q62702Z302Z | C4751 | EPCOS AG |
| Q62702Z302Z | D1180 | EPCOS AG ABT. PR ROE K PM |
| Q62702Z302Z | C0426 | HENSOLDT SENSORS GMBH |
| 1N821 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| JAN1N821 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 1N821 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MILS19500-159 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 5040-54 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 4178600-206 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 353-3496-000 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 514342 | D0327 | SELEX ES GMBH |
| 21950 | 30377 | SMITHS AEROSPACE INC. ELECTRONICSYSTEMS-GRAND RAPIDS |
| 152-0461-00 | 59873 | SPACELABS-HILLSBORO OPERATIONSSQUIBB VITATEK INC |
| 205933-1 | 14028 | SYPRIS ELECTRONICS, LLC |
| 741002 | 52542 | SYSTRON-DONNER CORPMICROWAVE/INSTRUMENT DIV |
Technical Data | NSN 5961-00-866-5454
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | AS35.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF250.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | VOLTAGE REFERENCE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 159 GOVERNMENT SPECIFICATION |