Part Details | TRANSISTOR
5961-00-878-8199 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N2151, 5075121, 507512-1, 2N2151, 5961-00-878-8199, 00-878-8199, 5961008788199, 008788199
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 22, 1967 | 00-878-8199 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-878-8199
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N2151 | 12969 | MICRO USPD INC |
| 507512-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N2151 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-878-8199
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AC2.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB30.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.190 INCHES |
| TERMINAL TYPE AND QUANTITY | 4 TAB, SOLDER LUG |
| OVERALL LENGTH | 0.672 INCHES NOMINAL |
| OVERALL DIAMETER | 0.505 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.437 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |