NSN 5961-00-879-6350

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-00-879-6350 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: SLD24TI, 5075851, 507585-1, SLD24TI, B808, B-808, 5961-00-879-6350, 00-879-6350, 5961008796350, 008796350

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 27, 196700-879-635062108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

HALF-WAVE 1 PHASE

Cross Reference | NSN 5961-00-879-6350
Part Number Cage Code Manufacturer
SLD24TI0EC70MICROSEMI CORPRPM MICRO DIV
507585-196214RAYTHEON COMPANYDBA RAYTHEON
SLD24TI21845SOLITRON DEVICES, INC.
B-80801295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-00-879-6350
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC24000.0 PEAK INVERSE VOLTAGE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC800.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
MOUNTING METHOD UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY2 TAB W/SCREW
CIRCUIT CONNECTION STYLE DESIGNATOR HALF-WAVE 1 PHASE
OVERALL LENGTH3.500 INCHES NOMINAL
OVERALL WIDTH1.000 INCHES NOMINAL
OVERALL HEIGHT0.750 INCHES NOMINAL