Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-879-7531 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: GPD010, GPD-010, 5961PL1277850, RS194, 152010700, 152-0107-00, G727, G7272, G727-2, 5961-00-879-7531, 00-879-7531, 5961008797531, 008797531
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 10, 1967 | 00-879-7531 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-879-7531
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| GPD-010 | 14936 | GENERAL SEMICONDUCTOR INC |
| 5961PL1277850 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
| RS194 | 15238 | ITT SEMICONDUCTORSA DIVISION OF INTERNATIONAL |
| 152-0107-00 | 80009 | TEKTRONIX, INC.DBA TEKTRONIX |
| G727 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| G727-2 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-879-7531
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 1.0 MAXIMUM FORWARD VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | CC400.00 MILLIAMPERES MAXIMUM AND AF1.00 AMPERES MAXIMUM AND CF10.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG400.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.125 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |