Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-881-8191 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N430A, 9175629, 1N430A, 9175629, 5961-00-881-8191, 00-881-8191, 5961008818191, 008818191
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-881-8191 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-881-8191
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N430A | 99942 | N A P SMD TECHNOLOGY INC |
| 9175629 | 30043 | SOLID STATE DEVICES, INC. |
| 1N430A | 15818 | TELCOM SEMICONDUCTOR INC |
| 9175629 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-881-8191
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 8.4 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AS10.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG0.3 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.625 INCHES |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.769 INCHES NOMINAL |
| OVERALL DIAMETER | 0.595 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.780 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |