NSN 5961-00-882-8349

Part Details | TRANSISTOR

5961-00-882-8349 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1414, 2N1414, 2N1413, 2N1413, RELEASE2810, 2N1414, 2N1413, 2N1414, GE2, 2N1414, 2N1414, 2N1413, 18500200, 1850-0200, 18500155, 1850-0155, 2N1413, 18500200, 1850-0200, 18500155, 1850-0155, 2N1414, 5003212, 5003-212, 2N1413, 2N1413, 5961-00-882-8349, 00-882-8349, 5961008828349, 008828349

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196200-882-834920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-882-8349
Part Number Cage Code Manufacturer
2N1414K7692ABLE INSTRUMENTS & CONTROLS LTD
2N1414U5107ABLE INSTRUMENTS & CONTROLS LTD
2N141311058CSR INDUSTRIES INC
2N141380131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE281080131ELECTRONIC INDUSTRIES ASSOCIATION
2N141480131ELECTRONIC INDUSTRIES ASSOCIATION
2N141312045ELECTRONIC TRANSISTORS CORP
2N141404713FREESCALE SEMICONDUCTOR, INC.
GE209214GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
2N141409214GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
2N141403508GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
2N141314936GENERAL SEMICONDUCTOR INC
1850-020028480HEWLETT-PACKARD COMPANYDBA HP
1850-015528480HEWLETT-PACKARD COMPANYDBA HP
2N141316068INTERNATIONAL DIODE CORP
1850-02001LQK8KEYSIGHT TECHNOLOGIES, INC.
1850-01551LQK8KEYSIGHT TECHNOLOGIES, INC.
2N14145V1P1ON SEMICONDUCTOR CORPORATION
5003-21205869RAYTHEON COMPANYDBA RAYTHEON
2N141331338SEMITRONICS CORP
2N141334428UNITED PAGE INC
Technical Data | NSN 5961-00-882-8349
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC200.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB200.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE BASE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL DIAMETER0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELESE2810 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION