Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-883-1958 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: DT60121F, BUWEPSDWG2557516, 2557516, 5961-00-883-1958, 00-883-1958, 5961008831958, 008831958
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 29, 1967 | 00-883-1958 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-883-1958
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DT60121F | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| BUWEPSDWG2557516 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 2557516 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
Technical Data | NSN 5961-00-883-1958
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.5 MAXIMUM BREAKDOWN VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AS18.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF1.5 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.190 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 1.253 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.505 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |