NSN 5961-00-883-6386

Part Details | TRANSISTOR

5961-00-883-6386 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: DMS87023B, 2N4223, RELEASE5238, 2N4223, 2N4223, 5961-00-883-6386, 00-883-6386, 5961008836386, 008836386

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 15, 196700-883-638620588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-883-6386
Part Number Cage Code Manufacturer
DMS87023B16236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
2N422380131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE523880131ELECTRONIC INDUSTRIES ASSOCIATION
2N422304713FREESCALE SEMICONDUCTOR, INC.
2N422321845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-00-883-6386
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAB10.00 MILLIAMPERES MAXIMUM AND AC20.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG300.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.188 INCHES NOMINAL
OVERALL DIAMETER0.219 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE5238 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION