Part Details | TRANSISTOR
5961-00-883-6850 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N409, RELEASE 2037, 2N409, 5961-00-883-6850, 00-883-6850, 5961008836850, 008836850
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-883-6850 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-883-6850
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N409 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 2037 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N409 | 18722 | HARRIS CORPSEMICONDUCTOR SECTOR |
Technical Data | NSN 5961-00-883-6850
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 0.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC15.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB80.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 80.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.188 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.495 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.260 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| SPECIFICATION/STANDARD DATA | 80131-RELESE2037 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |