NSN 5961-00-887-5929

Part Details | TRANSISTOR

5961-00-887-5929 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 014678, 014-678, 185321480, 18532-1480, 2N3945, RELEASE5161, 2N3945, 2N3945, 5961-00-887-5929, 00-887-5929, 5961008875929, 008875929

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 29, 196700-887-592920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-887-5929
Part Number Cage Code Manufacturer
014-67892739AMPEX SYSTEMS CORP
18532-1480U6441ATLANTIC INERTIAL SYSTEMS LIMITEDDBA GOODRICH SENSORS AND INTEGRATED
2N394580131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE516180131ELECTRONIC INDUSTRIES ASSOCIATION
2N394503877GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP
2N3945K7093NATIONAL SEMICONDUCTOR UK LTD
Technical Data | NSN 5961-00-887-5929
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC1.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB5.0 WATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.260 INCHES MAXIMUM
OVERALL DIAMETER0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA80131-RELESE5161 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION