NSN 5961-00-890-9867

Part Details | TRANSISTOR

5961-00-890-9867 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N4856A, 2N4856, 2N4856, 7230951, 723095-1, 5313301, 531330-1, 4531711, 2N4856, 5961-00-890-9867, 00-890-9867, 5961008909867, 008909867

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59APR 19, 196800-890-986720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-890-9867
Part Number Cage Code Manufacturer
2N4856AC7191ADELCO ELEKTRONIK GMBH
2N4856C7191ADELCO ELEKTRONIK GMBH
2N485627014NATIONAL SEMICONDUCTOR CORPORATION
723095-105869RAYTHEON COMPANYDBA RAYTHEON
531330-196214RAYTHEON COMPANYDBA RAYTHEON
4531711D0894ROHDE & SCHWARZ GMBH & CO. KG
2N485601295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-00-890-9867
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAK50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG360.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.188 INCHES NOMINAL
OVERALL DIAMETER0.220 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE