NSN 5961-00-892-0885

Part Details | TRANSISTOR

5961-00-892-0885 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1382, RELEASE2904, 2N1382, 2N1382, 2N1382, 2N1382, 2N1382, 2N1382, 5961-00-892-0885, 00-892-0885, 5961008920885, 008920885

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196100-892-088520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-892-0885
Part Number Cage Code Manufacturer
2N138280131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE290480131ELECTRONIC INDUSTRIES ASSOCIATION
2N138212045ELECTRONIC TRANSISTORS CORP
2N138204713FREESCALE SEMICONDUCTOR, INC.
2N138214936GENERAL SEMICONDUCTOR INC
2N138208225INDUSTRO TRANSISTOR CORP
2N13825V1P1ON SEMICONDUCTOR CORPORATION
2N138207256SILICON TRANSISTOR CORPSUB OF BBF INC
Technical Data | NSN 5961-00-892-0885
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC200.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB250.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.250 INCHES NOMINAL
OVERALL DIAMETER0.359 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP