NSN 5961-00-899-3134

Part Details | TRANSISTOR

5961-00-899-3134 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1204, RELEASE2846, 2N1204, 2N1204, 2N1204, 18500073, 1850-0073, 18500073, 1850-0073, 10525841, 5961-00-899-3134, 00-899-3134, 5961008993134, 008993134

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196000-899-313420588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-899-3134
Part Number Cage Code Manufacturer
2N120401364ALLIED ELECTRONICS INC SUB OFHALL-MARK ELECTRONICS CORP
RELEASE284680131ELECTRONIC INDUSTRIES ASSOCIATION
2N120480131ELECTRONIC INDUSTRIES ASSOCIATION
2N120487216FORD AEROSPACE CORPELECTRONICS DIV
2N120404713FREESCALE SEMICONDUCTOR, INC.
1850-007328480HEWLETT-PACKARD COMPANYDBA HP
1850-00731LQK8KEYSIGHT TECHNOLOGIES, INC.
1052584119200US ARMY ARDEC RDECOM
Technical Data | NSN 5961-00-899-3134
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION PNP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC500.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB200.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.250 INCHES NOMINAL
OVERALL DIAMETER0.359 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE