NSN 5961-00-902-7970

Part Details | TRANSISTOR

5961-00-902-7970 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N2599A, RELEASE4797, 2N2599A, 2N2599A, 2N2599A, 2N2599A, 2N2599A, 2N2599A, 5961-00-902-7970, 00-902-7970, 5961009027970, 009027970

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196000-902-797020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-902-7970
Part Number Cage Code Manufacturer
2N2599A80131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE479780131ELECTRONIC INDUSTRIES ASSOCIATION
2N2599A34156FALKOR PARTNERS, LLCDBA SEMICOA
2N2599A14321PD & E ELECTRONICS LLC
2N2599A50891SEMICONDUCTOR TECHNOLOGY INCDBA S T I
2N2599A31338SEMITRONICS CORP
2N2599A30043SOLID STATE DEVICES, INC.
2N2599A21845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-00-902-7970
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC125.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC50.00 MILLIAMPERES MAXIMUM AND AE5.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB400.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.085 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELESE4797 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION