NSN 5961-00-905-2339

Part Details | TRANSISTOR

5961-00-905-2339 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1623, 2N1623, 2N1623, RELEASE3335, 2N1623, 2N1623, 2N1623, 5961-00-905-2339, 00-905-2339, 5961009052339, 009052339

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196000-905-233920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-905-2339
Part Number Cage Code Manufacturer
2N162392739AMPEX SYSTEMS CORP
2N162312498CRYSTALONICS, INC.
2N162380131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE333580131ELECTRONIC INDUSTRIES ASSOCIATION
2N162354X10RAYTHEON COMPANYDBA RAYTHEON
2N162349956RAYTHEON COMPANYDBA RAYTHEON
2N16233B150RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-00-905-2339
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB250.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT165.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.260 INCHES MAXIMUM
OVERALL DIAMETER0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELESE3335 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION