Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-906-6038 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N645, 1N645, 4681691, 468169-1, 1N645, 1N645, 1N645, 5961-00-906-6038, 00-906-6038, 5961009066038, 009066038
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1960 | 00-906-6038 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-906-6038
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N645 | 14936 | GENERAL SEMICONDUCTOR INC |
| 1N645 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 468169-1 | 94580 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| 1N645 | 14433 | ITT SEMICONDUCTORS DIV |
| 1N645 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| 1N645 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-00-906-6038
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 225.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CH200.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF0.6 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |