NSN 5961-00-906-7876

Part Details | THYRISTOR SEMICONDUCTOR DEVICE

5961-00-906-7876 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N3653, RELEASE4957, 2N3653, C40D, C408, C141BX86, C140D, 2332162G1, 2332162, C40B, C141BX158, NLC40B, NL-C40B, 65A582, 2N3653, 66WH, 2863005, 2863-005, SMB651059, 5961-00-906-7876, 00-906-7876, 5961009067876, 009067876

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196000-906-787633096 ( SEMICONDUCTOR DEVICE, THYRISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-906-7876
Part Number Cage Code Manufacturer
2N365380294BOURNS INSTRUMENTS INC
RELEASE495780131ELECTRONIC INDUSTRIES ASSOCIATION
2N365380131ELECTRONIC INDUSTRIES ASSOCIATION
C40D09019GENERAL ELECTRIC COPOWER ELECTRONICS SYSTEMS DEPT
C40809214GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
C141BX8603508GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
C140D09214GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
2332162G131550HARRIS CORPORATIONDBA NIGHT VISION & COMMUNICATIONS
233216231550HARRIS CORPORATIONDBA NIGHT VISION & COMMUNICATIONS
C40B99971LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE
C141BX15899971LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE
NL-C40B83781NATIONAL ELECTRONICSDIV OF RICHARDSON ELECTRONICS LTD
65A58229192OLYMPUS SCIENTIFIC SOLUTIONSTECHNOLOGIES INC.
2N365311871RECON/OPTICAL, INC.
66WH74006RELIANCE COMM/TEC CORPLORAIN PRODUCTS DIV
2863-00574006RELIANCE COMM/TEC CORPLORAIN PRODUCTS DIV
SMB65105980063US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS
Technical Data | NSN 5961-00-906-7876
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC4.5 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 2.0 MAXIMUM ON-STATE VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICDN16.00 AMPERES MAXIMUM AND DF500.00 MILLIAMPERES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT70.0 DEG CELSIUS CASE
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE ANODE
MOUNTING METHOD THREADED STUD
MOUNTING FACILITY QUANTITY1
THREAD SERIES DESIGNATOR UNF
NOMINAL THREAD SIZE0.250 INCHES
TERMINAL TYPE AND QUANTITY1 THREADED STUD AND 2 TAB, SOLDER LUG
OVERALL LENGTH0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA80131-RELESE4957 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION