Part Details | TRANSISTOR
5961-00-911-6185 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: JAN2N914A, 26002733, 2600-2733, 1AL, 26007020, 021011100, 021-0111-00, 26002733, 26007000, 2600-7000, DUM1A, 2N914, 2N914SPECIAL, 5961PL1385313, 08420115055, 084-20115-055, MILS19500373, MILS19500-373, JAN2N914, 525758, 5257-58, 44597 28740, 5961-00-911-6185, 00-911-6185, 5961009116185, 009116185
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 29, 1966 | 00-911-6185 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-911-6185
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JAN2N914A | C7191 | ADELCO ELEKTRONIK GMBH |
| 2600-2733 | 72314 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| 1AL | 72314 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| 26007020 | 72314 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| 021-0111-00 | 21542 | CTS FABRI-TEK INC SYSTEMS DIV |
| 26002733 | 30669 | E AND R ELECTRONICS INCDBA DUMONT OSCILLOSCOPE |
| 2600-7000 | 30669 | E AND R ELECTRONICS INCDBA DUMONT OSCILLOSCOPE |
| DUM1A | 13715 | FAIRCHILD SEMICONDUCTOR CORPCOMPONENTS GROUP |
| 2N914 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N914SPECIAL | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 5961PL1385313 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
| 084-20115-055 | 12131 | LH ENTERPRISE |
| MILS19500-373 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN2N914 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 5257-58 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 44597 28740 | D8385 | THALES DEUTSCHLAND GMBHDBA VERTEIDIGUNGSSYSTEME SEL GMBH |
Technical Data | NSN 5961-00-911-6185
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| POWER RATING PER CHARACTERISTIC | AF360.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 373 GOVERNMENT SPECIFICATION |