NSN 5961-00-912-1676

Part Details | TRANSISTOR

5961-00-912-1676 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1016E, 3520410010, 352-0410-010, 2N1016E, 2N1016E, 5961-00-912-1676, 00-912-1676, 5961009121676, 009121676

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196000-912-167620588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-912-1676
Part Number Cage Code Manufacturer
2N1016E80131ELECTRONIC INDUSTRIES ASSOCIATION
352-0410-01095105ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS
2N1016E79500WESTINGHOUSE ELECTRIC CORP
2N1016E05277WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV
Technical Data | NSN 5961-00-912-1676
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB5.00 AMPERES MAXIMUM AND AC7.50 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF150.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT165.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD THREADED STUD
MOUNTING FACILITY QUANTITY1
THREAD SERIES DESIGNATOR UNF
NOMINAL THREAD SIZE0.190 INCHES
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.546 INCHES MAXIMUM
OVERALL DIAMETER1.281 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE2653 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION