NSN 5961-00-929-3055

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-00-929-3055 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: SCBR2, SCBR2, 5961-00-929-3055, 00-929-3055, 5961009293055, 009293055

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 31, 196600-929-305562108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-929-3055
Part Number Cage Code Manufacturer
SCBR214099SEMTECH CORPORATION
SCBR2SH879SEMTECH CORPUS CHRISTI.A. DE C.V.REYNOSA FACILITY
Technical Data | NSN 5961-00-929-3055
Characteristic Specifications
SPECIAL FEATURESSILICON,SINGLE PHASE FULL WAVE BRIDGE;200V PEAK INVERSE VOLTAGE;140V RMS VOLTAGE;1.5 AMP AVERAGE RECTIFIED CURRENT AT 25 DEG C AND 1.05 AMP AT 100 DEG C;10 AMP RECURRENT SURGE CURRENT AT 25 DEG C;HERMETICALLY SEALED UNITS;MOLDED CASE;0.875 IN. DIA;0.250 IN. H;4 SOLDER STUD TYPE TERMINALS 0.137 IN. MAX H;TERMINALS EQUALLY SPACED ON 0.625 IN. DIA CIRCLE;ONE 0.144 IN. DIA UNTHREADED MTG HOLE COUNTERBORED 0.310 IN. IN. DIA BY 0.125 IN. DEEP THROUGH CENTER OF CASE;M55.0 TO P150.0 DEG C OPERATING TEMP;STORAGE TEMP RANGE:MINUS 55.0 TO 150.0 DEG CELCIUS