Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-929-3757 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N1124A, 2412460, 2412460, 2412460, 1N1124A, 1N1124A, 2412460, 1N1124A, 5961-00-929-3757, 00-929-3757, 5961009293757, 009293757
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 09, 1966 | 00-929-3757 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-929-3757
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N1124A | 51182 | DIODES INC |
| 2412460 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
| 2412460 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 2412460 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N1124A | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N1124A | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 2412460 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| 1N1124A | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-929-3757
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CG3.30 AMPERES MAXIMUM |
| INCLOSURE MATERIAL | GLASS AND METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.190 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND 1 TAB, SOLDER LUG |
| OVERALL LENGTH | 1.019 INCHES MINIMUM AND 1.050 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.432 INCHES MINIMUM AND 0.445 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |