Part Details | TRANSISTOR
5961-00-932-0553 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 5961009320553, 4826166223, 4826-166223, 166223, FN3653, F1047, U1249, F1047, 5961-00-932-0553, 00-932-0553, 5961009320553, 009320553
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 21, 1966 | 00-932-0553 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-932-0553
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5961009320553 | SCY13 | E.C.A ETABLISSEMENTCENTRALD'APPROVISIONNEMENT DES |
| 4826-166223 | 89536 | FLUKE CORPORATION |
| 166223 | 89536 | FLUKE CORPORATION |
| FN3653 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| F1047 | 21845 | SOLITRON DEVICES, INC. |
| U1249 | 15818 | TELCOM SEMICONDUCTOR INC |
| F1047 | 05397 | UNION CARBIDE CORP MATERIALS SYSTEMSDIV |
Technical Data | NSN 5961-00-932-0553
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| POWER RATING PER CHARACTERISTIC | AF300.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |