Part Details | TRANSISTOR
5961-00-937-0390 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 72306022, 723060-22, 2N3233, 5961-00-937-0390, 00-937-0390, 5961009370390, 009370390
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 28, 1966 | 00-937-0390 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-937-0390
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 723060-22 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N3233 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
Technical Data | NSN 5961-00-937-0390
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 110.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC7.50 AMPERES MAXIMUM AND AB3.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB666.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| OVERALL LENGTH | 0.333 INCHES MINIMUM AND 0.359 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.761 INCHES MINIMUM AND 0.769 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |