Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER
5961-00-937-8949 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.
Alternate Parts: BCD20F4F, SMB5406512, SM-B-540651-2, 5961-00-937-8949, 00-937-8949, 5961009378949, 009378949
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 08, 1967 | 00-937-8949 | 62108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED ) |
REFERENCE DRAWINGS & PICTURES
BRIDGE 1 PHASE
Cross Reference | NSN 5961-00-937-8949
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| BCD20F4F | 73506 | BRADLEY SEMICONDUCTOR CORP |
| SM-B-540651-2 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
Technical Data | NSN 5961-00-937-8949
| Characteristic | Specifications |
|---|---|
| MATERIAL | SILICON |
| ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 PEAK INVERSE VOLTAGE |
| ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC | 20.00 AMPERES PEAK FORWARD SURGE CURRENT |
| MOUNTING METHOD | UNTHREADED HOLE |
| TERMINAL TYPE AND QUANTITY | 4 TURRET |
| CIRCUIT CONNECTION STYLE DESIGNATOR | BRIDGE 1 PHASE |
| OVERALL LENGTH | 0.812 INCHES NOMINAL |
| OVERALL WIDTH | 0.812 INCHES NOMINAL |
| OVERALL HEIGHT | 0.500 INCHES NOMINAL |