Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-938-5115 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N3312B, RELEASE3669, 1N3312B, 1N3312B, 1N3312B, 1N3312B, 5961-00-938-5115, 00-938-5115, 5961009385115, 009385115
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 21, 1967 | 00-938-5115 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-938-5115
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N3312B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE3669 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N3312B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N3312B | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 1N3312B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 1N3312B | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
Technical Data | NSN 5961-00-938-5115
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 13.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | EB960.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF50.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 0.450 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.667 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE3669 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |