Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-939-4188 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1194032P1, 1N3658, RELEASE4269, 1N3658, 1N3658, 1N3658, 1N3658, 5961-00-939-4188, 00-939-4188, 5961009394188, 009394188
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 27, 1965 | 00-939-4188 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-939-4188
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1194032P1 | 94117 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| 1N3658 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE4269 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N3658 | 12969 | MICRO USPD INC |
| 1N3658 | 14552 | MICROSEMI CORPORATION |
| 1N3658 | 31338 | SEMITRONICS CORP |
| 1N3658 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-00-939-4188
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CG0.75 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.750 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.160 INCHES NOMINAL |
| OVERALL DIAMETER | 0.085 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE4269 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |