Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-943-8603 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N445B, 1N445B, 1N445B, 16540431, 1654043-1, 5961-00-943-8603, 00-943-8603, 5961009438603, 009438603
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 16, 1966 | 00-943-8603 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-943-8603
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N445B | 72699 | GENERAL INSTRUMENT CORPCORPORATE HEADQUARTERS |
| 1N445B | 14936 | GENERAL SEMICONDUCTOR INC |
| 1N445B | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 1654043-1 | 56232 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
Technical Data | NSN 5961-00-943-8603
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 35.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CH30.00 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF130.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 90.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES NOMINAL |
| OVERALL DIAMETER | 0.110 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |