NSN 5961-00-943-9203

Part Details | TRANSISTOR

5961-00-943-9203 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: JAN2N2608A, 2N2608A, 2N2608, 18550029, 1855-0029, 9661023, 966102-3, 20681690701, 2068169-0701, JAN2N2608, 2N2608, 2846141305, 28461-41305, MQ2N2608, TX2N2608, MILS19500295, MIL-S-19500/295, JAN2N2608, 4192800215, 4192800-215, 3527500881, 352-7500-881, 3527500360, 352-7500-360, 3520605010, 352-0605-010, 2N2608, 2N2608, 5961-00-943-9203, 00-943-9203, 5961009439203, 009439203

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 11, 196600-943-920320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-943-9203
Part Number Cage Code Manufacturer
JAN2N2608AC7191ADELCO ELEKTRONIK GMBH
2N2608A04713FREESCALE SEMICONDUCTOR, INC.
2N260804713FREESCALE SEMICONDUCTOR, INC.
1855-002928480HEWLETT-PACKARD COMPANYDBA HP
966102-394580HONEYWELL INTERNATIONAL INC.DBA HONEYWELL
2068169-070127914HONEYWELL INTERNATIONAL INCDBA HONEYWELL
JAN2N260881350JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS
2N260807688JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL
28461-41305K0662LEONARDO MW LTD
MQ2N260843611MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE
TX2N260881349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
MIL-S-19500/29581349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
JAN2N260881349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
4192800-21505869RAYTHEON COMPANYDBA RAYTHEON
352-7500-88113499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
352-7500-36013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
352-0605-01013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
2N260817856SILICONIX INCORPORATEDDIV SILICONIX
2N2608D9816WIMA SPEZIALVERTRIEBELEKTRONISCHERBAUELEMENTE GMBH &
Technical Data | NSN 5961-00-943-9203
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 4.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE
CURRENT RATING PER CHARACTERISTICBR5.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF300.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT0.210 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE