Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-945-4510 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: P111441, P11144-1, 1N1346RA, 1N1346RA, 1N1346RA, 5961-00-945-4510, 00-945-4510, 5961009454510, 009454510
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 04, 1966 | 00-945-4510 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-945-4510
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| P11144-1 | 07639 | GE AVIATION SYSTEMS LLCDBA GE AVIATION |
| 1N1346RA | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 1N1346RA | 10607 | NORTH AMERICA ELECTRONIC |
| 1N1346RA | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-00-945-4510
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CG150.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS AND METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-4 |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.190 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND 1 TAB, SOLDER LUG |
| OVERALL LENGTH | 0.405 INCHES NOMINAL |
| OVERALL DIAMETER | 0.424 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |