Part Details | TRANSISTOR
5961-00-953-4485 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: RELEASE3634, 2N917, 2N917, 2N917, 2N917, 2N917, 2N917, 2N917, 2N917, 2N917, 2N917, 2N917, 2N917, 3520344000, 352-0344-000, 352034400, 352-0344-00, 2N917, 2N917, 2N917, 2N917, 5961-00-953-4485, 00-953-4485, 5961009534485, 009534485
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-953-4485 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-953-4485
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| RELEASE3634 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N917 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N917 | 12045 | ELECTRONIC TRANSISTORS CORP |
| 2N917 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 2N917 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 2N917 | 1MY79 | INTERSIL COMMUNICATIONS INC. |
| 2N917 | 34371 | INTERSIL CORPORATIONDIV NA |
| 2N917 | 15238 | ITT SEMICONDUCTORSA DIVISION OF INTERNATIONAL |
| 2N917 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2N917 | 12040 | NATIONAL SEMICONDUCTOR CORP |
| 2N917 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N917 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N917 | 54590 | RCA CORPDISTRIBUTION AND SPECIAL PRODUCTS |
| 352-0344-000 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 352-0344-00 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 2N917 | 30043 | SOLID STATE DEVICES, INC. |
| 2N917 | 15818 | TELCOM SEMICONDUCTOR INC |
| 2N917 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| 2N917 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-00-953-4485
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| POWER RATING PER CHARACTERISTIC | AB200.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.188 INCHES NOMINAL |
| OVERALL DIAMETER | 0.219 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE3634 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |