NSN 5961-00-954-5817

Part Details | TRANSISTOR

5961-00-954-5817 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 666215721, 666215-721, 2N1039, 2N2188, 2N1039, 2N2188, 5961-00-954-5817, 00-954-5817, 5961009545817, 009545817

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196000-954-581720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-954-5817
Part Number Cage Code Manufacturer
666215-72112436BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC.
2N103953399GPD OPTOELECTRONICS CORP.DIV GPD OPTOELECTRONICS
2N218896214RAYTHEON COMPANYDBA RAYTHEON
2N103907256SILICON TRANSISTOR CORPSUB OF BBF INC
2N218801295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-00-954-5817
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC30.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB125.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.335 INCHES NOMINAL
OVERALL DIAMETER0.265 INCHES NOMINAL
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP