Part Details | TRANSISTOR
5961-00-954-9337 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N3232, 2N3232, RELEASE4716, 2N3232, 2N3232, 2N3232, 2N3232, 2N3232, 18540084, 1854-0084, 2N3232, 2N3232, A23247001, A23247-001, 2N3232, 2N3232, 2N3232, 2N3232, 2N3232, 2N3232, 2N3232, 2N3232, 2N3232, 2N3232, 5961-00-954-9337, 00-954-9337, 5961009549337, 009549337
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 11, 1966 | 00-954-9337 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-954-9337
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N3232 | 52333 | API ELECTRONICS, INC.DBA API TECHNOLOGIES CORP |
| 2N3232 | 11058 | CSR INDUSTRIES INC |
| RELEASE4716 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N3232 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N3232 | 12045 | ELECTRONIC TRANSISTORS CORP |
| 2N3232 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 2N3232 | 34156 | FALKOR PARTNERS, LLCDBA SEMICOA |
| 2N3232 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1854-0084 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 2N3232 | 07595 | HUG ELECTRONICS CORP |
| 2N3232 | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| A23247-001 | 13923 | L3 TECHNOLOGIES, INC.DBA L3 TELEMETRY & RF PRODUCTS |
| 2N3232 | 33178 | MICROSEMI PPC INC |
| 2N3232 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 2N3232 | F1721 | RADIOTECHNIQUE-COPRIM 'R.T.C.'LASA DIV 'RADIOTECHNIQUE' |
| 2N3232 | 13409 | RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR |
| 2N3232 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
| 2N3232 | 21873 | SLATER ELECTRIC INC |
| 2N3232 | 30045 | SOLID POWER CORP |
| 2N3232 | 30043 | SOLID STATE DEVICES, INC. |
| 2N3232 | 21845 | SOLITRON DEVICES, INC. |
| 2N3232 | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-00-954-9337
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AB3.00 AMPERES MAXIMUM AND AC7.50 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB117.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 0.400 INCHES MINIMUM AND 0.420 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.760 INCHES MINIMUM AND 0.770 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE4716 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |