NSN 5961-00-958-8432

Part Details | TRANSISTOR

5961-00-958-8432 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1721, 2N1721, 2N1721, 2N1721, 2N1721, 10018826008, 10018826-008, 5961-00-958-8432, 00-958-8432, 5961009588432, 009588432

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196000-958-843220588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-958-8432
Part Number Cage Code Manufacturer
2N172103508GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
2N172110214GENERAL TRANSISTOR WESTERN CORP
2N172196214RAYTHEON COMPANYDBA RAYTHEON
2N172131338SEMITRONICS CORP
2N172101295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
10018826-00818876U S ARMY AVIATION AND MISSILECOMMAND
Technical Data | NSN 5961-00-958-8432
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC1.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB10.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD THREADED STUD
MOUNTING FACILITY QUANTITY1
THREAD SERIES DESIGNATOR UNF
NOMINAL THREAD SIZE0.190 INCHES
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.260 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS0.437 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN