Part Details | TRANSISTOR
5961-00-958-9381 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N1986, 2N1983, 2N1983, RELEASE3455, RELEASE3268, 2N1986, 2N1983, 2N1983, 2N1983, 2N1983, 18540012, 1854-0012, 2N1986, 2N1983, 18540012, 1854-0012, 2N1983, 2N1986, 2N1983, 2N1983, 2N1983, 2N1986, 2N1983, 2N1986, 2N1983, 5961-00-958-9381, 00-958-9381, 5961009589381, 009589381
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1960 | 00-958-9381 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-958-9381
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N1986 | 0PN68 | AMPEX DATA SYSTEMS CORPORATION |
| 2N1983 | 11058 | CSR INDUSTRIES INC |
| 2N1983 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE3455 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE3268 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N1986 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N1983 | 12045 | ELECTRONIC TRANSISTORS CORP |
| 2N1983 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 2N1983 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N1983 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 1854-0012 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 2N1986 | 64039 | HYBRID SEMICONDUCTORS & ELECTRONICSINC |
| 2N1983 | 08225 | INDUSTRO TRANSISTOR CORP |
| 1854-0012 | 1LQK8 | KEYSIGHT TECHNOLOGIES, INC. |
| 2N1983 | 03538 | LOCKHEED MARTIN CORPORATIONDIV RMS |
| 2N1986 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N1983 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N1983 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N1983 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N1986 | 50891 | SEMICONDUCTOR TECHNOLOGY INCDBA S T I |
| 2N1983 | 30043 | SOLID STATE DEVICES, INC. |
| 2N1986 | 15818 | TELCOM SEMICONDUCTOR INC |
| 2N1983 | 15818 | TELCOM SEMICONDUCTOR INC |
Technical Data | NSN 5961-00-958-9381
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC1.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB600.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 165.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE3268 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |