Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-962-5260 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N1202, 4JA25BX20, 666826, 66-6826, 106302331, 10630233-1, 5961-00-962-5260, 00-962-5260, 5961009625260, 009625260
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1960 | 00-962-5260 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-962-5260
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N1202 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 4JA25BX20 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 66-6826 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 10630233-1 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-962-5260
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CG12.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF18.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 190.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS AND METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.190 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND 1 TAB, SOLDER LUG |
| OVERALL LENGTH | 0.359 INCHES NOMINAL |
| OVERALL WIDTH ACROSS FLATS | 0.437 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |