Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-964-6810 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N889, 2N888, RELEASE3763, 2N889, 2N888, 2N889, 2N888, 2N889, 2N888, 2N889, 2N888, 71919918, 719199-18, 2N889, 2N888, 2N889, 2N888, 2N889, 5961-00-964-6810, 00-964-6810, 5961009646810, 009646810
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1960 | 00-964-6810 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-964-6810
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N889 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N888 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE3763 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N889 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 2N888 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 2N889 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 2N888 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 2N889 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 2N888 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 2N889 | 12969 | MICRO USPD INC |
| 2N888 | 12969 | MICRO USPD INC |
| 719199-18 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N889 | 31338 | SEMITRONICS CORP |
| 2N888 | 31338 | SEMITRONICS CORP |
| 2N889 | 30043 | SOLID STATE DEVICES, INC. |
| 2N888 | 30043 | SOLID STATE DEVICES, INC. |
| 2N889 | 55718 | SYNTAR INDUSTRIES INC |
Technical Data | NSN 5961-00-964-6810
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM BREAKOVER VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AC0.35 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE3763 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |