Part Details | TRANSISTOR
5961-00-982-6780 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 207026P3, 2N4063, 2N4063, RELEASE5399, 531231037, 531-231-037, 531231037, 531-231-037, 2N406371, 2N40637-1, 2N4063, 2N4063, 2N4063, 2N4063, 26663071, 2666307-1, GT816BE1, 39248, 40255, 264702001, 264702-001, 3522 500 20959, 5961-00-982-6780, 00-982-6780, 5961009826780, 009826780
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 14, 1966 | 00-982-6780 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-982-6780
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 207026P3 | 94117 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| 2N4063 | K0577 | BRITISH SAROZAL LTD |
| 2N4063 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5399 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 531-231-037 | C3141 | ELETTRONICA GMBH |
| 531-231-037 | A1997 | ELETTRONICA SPA |
| 2N40637-1 | 34371 | INTERSIL CORPORATIONDIV NA |
| 2N4063 | 34371 | INTERSIL CORPORATIONDIV NA |
| 2N4063 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 2N4063 | 33178 | MICROSEMI PPC INC |
| 2N4063 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2666307-1 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
| GT816BE1 | 26512 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV MISSION SYSTEMS |
| 39248 | 54590 | RCA CORPDISTRIBUTION AND SPECIAL PRODUCTS |
| 40255 | 21921 | RCA CORPDISTRIBUTOR AND SPECIAL PRODUCTS DIV |
| 264702-001 | 65092 | SOLARTRON ELECTRONICS INCWESTON INSTRUMENTS DIV |
| 3522 500 20959 | H0203 | THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS |
Technical Data | NSN 5961-00-982-6780
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC1.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB10.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 1.005 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5399 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |