NSN 5961-00-989-3761

Part Details | TRANSISTOR

5961-00-989-3761 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 014552, 014-552, 933011650112, 9330-116-50112, 2N930, RELEASE3550, 2N930, 2N930, 2N930, 2N930, 2N930, 2N930, 2N930, 2N930, 2N930, 2N930, N07038, 2N930, 2N930, 2N930, 2N930, 3515001010, 351-5001-010, 2N930, 2N930, 2N930, A1869D, 2N930, 2N930, 2N930, 5961-00-989-3761, 00-989-3761, 5961009893761, 009893761

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196200-989-376120588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-989-3761
Part Number Cage Code Manufacturer
014-55292739AMPEX SYSTEMS CORP
9330-116-5011252361COMMUNICATION SYSTEMS DIVNORTH AMERICAN PHILIPS CORP
2N93011058CSR INDUSTRIES INC
RELEASE355080131ELECTRONIC INDUSTRIES ASSOCIATION
2N93080131ELECTRONIC INDUSTRIES ASSOCIATION
2N93012045ELECTRONIC TRANSISTORS CORP
2N930D1326ELORA-WERKZEUGFABRIK GMBH
2N93034156FALKOR PARTNERS, LLCDBA SEMICOA
2N93004713FREESCALE SEMICONDUCTOR, INC.
2N93014936GENERAL SEMICONDUCTOR INC
2N93003877GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP
2N93008225INDUSTRO TRANSISTOR CORP
2N93014433ITT SEMICONDUCTORS DIV
2N93012040NATIONAL SEMICONDUCTOR CORP
N0703812040NATIONAL SEMICONDUCTOR CORP
2N93027014NATIONAL SEMICONDUCTOR CORPORATION
2N930H0002PHILIPS ELECTRONICS NEDERLAND B.V.DBA CAMPUS
2N930D2540PHILIPSSEMICONDUCTORSUNTERNEHMENSBEREICH
2N93096214RAYTHEON COMPANYDBA RAYTHEON
351-5001-01013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
2N93031338SEMITRONICS CORP
2N93030043SOLID STATE DEVICES, INC.
2N93021845SOLITRON DEVICES, INC.
A1869D15818TELCOM SEMICONDUCTOR INC
2N93015818TELCOM SEMICONDUCTOR INC
2N93001295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
2N93034428UNITED PAGE INC
Technical Data | NSN 5961-00-989-3761
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC30.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB300.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.188 INCHES NOMINAL
OVERALL DIAMETER0.220 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE3550 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION