Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-989-6525 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 19010023, 1901-0023, FD3445, 19010156, 1901-0156, 19010023, 1901-0023, HD4479, 10187915, HD4479, 10187915, 5961-00-989-6525, 00-989-6525, 5961009896525, 009896525
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-989-6525 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-989-6525
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1901-0023 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| FD3445 | 13715 | FAIRCHILD SEMICONDUCTOR CORPCOMPONENTS GROUP |
| 1901-0156 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1901-0023 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| HD4479 | 73293 | L-3 COMMUNICATIONS ELECTRONTECHNOLOGIES, INC. |
| 10187915 | 14321 | PD & E ELECTRONICS LLC |
| HD4479 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 10187915 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-989-6525
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1.0 MAXIMUM FORWARD VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | CG50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF230.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 85.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.270 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.115 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |