Part Details | TRANSISTOR
5961-00-990-4605 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N1671B, 535431007, 535-431-007, 535431007, 535-431-007, 984454, 98-4454, 2N1671B, 2N1671B, 2N1671B, 18550021, 1855-0021, 04052333011013, 18550021, 1855-0021, VA750388002, VA75-0388-002, 2N1671B, 2N1671B, 2N1671B, 2N1671B, V3330Z1671X1, Q0084, 2N1671B, 11699928, 5961-00-990-4605, 00-990-4605, 5961009904605, 009904605
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1960 | 00-990-4605 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-990-4605
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N1671B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 535-431-007 | C3141 | ELETTRONICA GMBH |
| 535-431-007 | A1997 | ELETTRONICA SPA |
| 98-4454 | 31751 | ELTEK ENERGY LLC |
| 2N1671B | 03776 | ESCO INC |
| 2N1671B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N1671B | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 1855-0021 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 04052333011013 | C7965 | ISS INTERNATIONAL SPARESSERVICESGMBH |
| 1855-0021 | 1LQK8 | KEYSIGHT TECHNOLOGIES, INC. |
| VA75-0388-002 | K0668 | LEONARDO MW LTD |
| 2N1671B | 02929 | NEWARK ELECTRONICS CORPORATIONDBA NEWARK |
| 2N1671B | 01794 | NORTEL NETWORKS |
| 2N1671B | 92755 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDBA LAND & SELF PROTECTION SYSTEM |
| 2N1671B | K0461 | RAYTHEON SYSTEMS LTD WEAPONSSUPPORT GROUP |
| V3330Z1671X1 | S3120 | SIEMENS SCHWEIZ AGDBA SIEMENS SWITZERLAND LTD. |
| Q0084 | 06811 | SYSTRON DONNER INERTIAL, INC.DBA SYSTRON DONNER INERTIAL |
| 2N1671B | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| 11699928 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-990-4605
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CURRENT RATING PER CHARACTERISTIC | A+6.00 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG450.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 140.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE3071 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |