NSN 5961-00-998-2859

Part Details | TRANSISTOR

5961-00-998-2859 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N2201, 2N2201, 2N2201, 65A7A61, 65A7A6-1, 3520428001, 352-0428-001, 2N2201, 5961-00-998-2859, 00-998-2859, 5961009982859, 009982859

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59APR 18, 196700-998-285920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-998-2859
Part Number Cage Code Manufacturer
2N220134156FALKOR PARTNERS, LLCDBA SEMICOA
2N220103508GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
2N220103877GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP
65A7A6-110001NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT
352-0428-00113499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
2N220130043SOLID STATE DEVICES, INC.
Technical Data | NSN 5961-00-998-2859
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
POWER RATING PER CHARACTERISTICAF15.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL AND UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL LENGTH1.430 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.330 INCHES MAXIMUM
OVERALL DIAMETER0.375 INCHES MAXIMUM
FEATURES PROVIDED MOUNTING HARDWARE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN