NSN 5961-01-003-0580

Part Details | TRANSISTOR

5961-01-003-0580 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: BAM120, BAM120S, BAM120-S, SD101912S0ECERAMIC, SD1019-1-2S0ECERAMIC, BAM120 STUD, BAM120, BAM120, 5961-01-003-0580, 01-003-0580, 5961010030580, 010030580

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 29, 197501-003-058020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-003-0580
Part Number Cage Code Manufacturer
BAM12058135ACRIAN INC
BAM120-S1S926AMERICAN MICROSEMICONDUCTOR INC
SD1019-1-2S0ECERAMIC81019DAYTON METAL PRODUCTS CO
BAM120 STUD06YP7PROTRONICS INC.
BAM1200NY61RF PRODUCTS INC
BAM12050155VARIAN ASSOCIATES INCCOMMUNICATIONS TRANSISTOR DIV
Technical Data | NSN 5961-01-003-0580
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC65.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
CURRENT RATING PER CHARACTERISTICAC9.00 AMPERES NOMINAL
POWER RATING PER CHARACTERISTICAB100.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL CERAMIC AND METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE EMITTER
MOUNTING METHOD THREADED STUD
MOUNTING FACILITY QUANTITY1
THREAD SERIES DESIGNATOR UNF
NOMINAL THREAD SIZE0.190 INCHES
TERMINAL TYPE AND QUANTITY4 FERRULE
OVERALL LENGTH0.290 INCHES MAXIMUM
OVERALL HEIGHT0.290 INCHES MAXIMUM
OVERALL WIDTH0.510 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN